}

Supply Of 6 Inch Soi Wafers High Conductive N-Type (Phosphorous/Arsenic Doped) Soi Wafer 50+/-1 Micron With 3 Micron Buried Oxide. 6 Inch Soi Wafers N-Type (Phosphorous/Arsenic Doped) Soi Wafer 10+/- 1Micron 6 Inch Soi Wafers N-Type (Phosphorous/, Chandigarh-Chandigarh

Department Of Space-DOS has published Supply Of 6 Inch Soi Wafers High Conductive N-Type (Phosphorous/Arsenic Doped) Soi Wafer 50+/-1 Micron With 3 Micron Buried Oxide. 6 Inch Soi Wafers N-Type (Phosphorous/Arsenic Doped) Soi Wafer 10+/- 1Micron 6 Inch Soi Wafers N-Type (Phosphorous/. Submission Date for this Tender is 27-05-2021. Pure Elemental Gases Tenders in Chandigarh Chandigarh. Bidders can get complete Tender details and download the document.




Tender Notice

27857748
Supply Of 6 Inch Soi Wafers High Conductive N-Type (Phosphorous/Arsenic Doped) Soi Wafer 50+/-1 Micron With 3 Micron Buried Oxide. 6 Inch Soi Wafers N-Type (Phosphorous/Arsenic Doped) Soi Wafer 10+/- 1Micron 6 Inch Soi Wafers N-Type (Phosphorous/
Open Tender
Indian
Chandigarh
Chandigarh
27-05-2021

Tender Details

Supply Of 6 Inch Soi Wafers High Conductive N-Type (Phosphorous/Arsenic Doped) Soi Wafer 50+/-1 Micron With 3 Micron Buried Oxide. 6 Inch Soi Wafers N-Type (Phosphorous/Arsenic Doped) Soi Wafer 10+/- 1Micron 6 Inch Soi Wafers N-Type (Phosphorous/Arsenic Doped) Soi Wafer 50+/- 1Micron. N Type Dsp Prime Wafers 6 Inch N Type Double Side Polished Silicon Prime Wafers.

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