Supply Of 6 Inch Soi Wafers High Conductive N-Type (Phosphorous/Arsenic Doped) Soi Wafer 50+/-1 Micron With 3 Micron Buried Oxide. 6 Inch Soi Wafers N-Type (Phosphorous/Arsenic Doped) Soi Wafer 10+/- 1Micron 6 Inch Soi Wafers N-Type (Phosphorous/, Chandigarh-Chandigarh

TDR : 27857748

Tender Notice

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Chandigarh , Chandigarh

Tender Brief : Supply Of 6 Inch Soi Wafers High Conductive N-Type (Phosphorous/Arsenic Doped) Soi Wafer 50+/-1 Micron With 3 Micron Buried Oxide. 6 Inch Soi Wafers N-Type (Phosphorous/Arsenic Doped) Soi Wafer 10+/- 1Micron 6 Inch Soi Wafers N-Type (Phosphorous/

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Submission Date
27-05-2021

Competition Type
Indian

Bidding Type
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Supply Of 6 Inch Soi Wafers High Conductive N-Type (Phosphorous/Arsenic Doped) Soi Wafer 50+/-1 Micron With 3 Micron Buried Oxide. 6 Inch Soi Wafers N-Type (Phosphorous/Arsenic Doped) Soi Wafer 10+/- 1Micron 6 Inch Soi Wafers N-Type (Phosphorous/, Chandigarh-Chandigarh

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Supply Of 6 Inch Soi Wafers High Conductive N-Type (Phosphorous/Arsenic Doped) Soi Wafer 50+/-1 Micron With 3 Micron Buried Oxide. 6 Inch Soi Wafers N-Type (Phosphorous/Arsenic Doped) Soi Wafer 10+/- 1Micron 6 Inch Soi Wafers N-Type (Phosphorous/, Chandigarh-Chandigarh

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