supply of igbt (insulated gate bipolar transistor) , igbt (insulated gate bipolar transistor) is a three-terminal semiconductor device (gate, collector, emitter) that combines the high-speed switching of a mosfet with the low saturation voltage of a bipolar junction transistor (bjt). specifications: (1) model no:ff1400r17ip4 (2) voltage : 1700 v (3) curren t :1400 a (4) repetitive peak collector current : 2800 a (5) collector-emitter saturation voltage : 1.75 v to 2.2v @ 1400a, 15v (6) gate-emitter peak voltage :20 v (7) module type: half-bridge (dual switch). (8) ope rating temperature: -40 to 150 ?c. (9) internal gate resistor: 1.6 ohm. (10) series/package: prime pac 3. make: infineon, mitsubishi, semikron, abb. [ warranty period: 12 months after the date of delivery ] ]