Tender For Metal-Organic Chemical Vapor Deposition (Mocvd) System With Accessories

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Tender For Metal-Organic Chemical Vapor Deposition (Mocvd) System With Accessories Or A) Metalorganic Chemical Vapor Deposition (Mocvd) System For Iiiphosphide (E.G., Inp, Ingap) And Iii-Arsenide (E.G., Gaas, Algaas) Growth. The Reactor Should Utilize A Close-Coupled Vertical-Flow Reactor Or Vertical High Speed Rotating Disk Reactor Design Capable Of Growth Of High-Quality Arsenide/Phosphide (As/P) Layers. This Design Shall Provide Uniform Precursor Distribution, Controlled Precursor Transport, Low Gas Residence Time, Minimized Parasitic Gasphase Reactions, And Reproducible Growth Of High-Quality As/P Layers. The Mocvd System Should Be Optimized For 4-Inch (100 Mm) Substrates And Must Balance Precise Thermal Control, Ultra-Pure Gas Delivery, And Rigorous Safety Infrastructure Due To The Highly Toxic Nature Of Hydride Gases. The Reactor Should Have Ultra-Fast Pneumatic Gas Switching. The Reactor Should Have The Possibility Of Changing The Shower Head To Susceptor Gap. B) The Reactor Should Be Capable Of Growing On 3X2”, 1X3” And 1X4” Substrates. C) Wafer/Susceptor Rotation Capability. Rotation Speed Should Be Commensurate With The Reactor Design. D) Heating To ≥850°C With Temperature Stability Of ± 1°C Or Better E) Rf/ Resistive Heating Arrangement With Minimum Three Zone. F) Separate Injection Of Grp Iii And Grp V Gases Into The Reactor Chamber To Avoid Pre-Reactions G) Optical Access Through More Than One Optical Ports For In Situ Diagnostics H) Stainless Steel Outer Chamber With Quartz/Other Liner To Prevent Deposition On The Chamber Wall 9 I) Chamber Wall Temperature Should Be Maintainable At Appropriate Temp By Water Cooling Or Other Suitable Mechanism. J) The Reactor Should Be Capable Of Being Leak Tested Separately. K) It Should Be Possible To Evacuate And Isolate The Reactor In Evacuated Condition For Pressure Rise Test. L) Sic Coated High Purity Graphite Susceptors Suitable For Holding 2”, 3” And 4” Dia Substrates M) Adequate Safety Against Over Pressure N) Real Time Reactor Temperature Profiling System. O) In-Situ Growth Monitoring: Should Be Able To Measure In-Situ, I. True Temperature Of The Wafer Using Optical Pyrometer (Accuracy ± 1 C Or Better) Ii. In Situ Measurement Tool For Simultaneous Reflectance And Curvature Measurement Multiple Position Reflectance And Temperature Measurements On A Single Wafer As Well As In Multi-Wafer Configuration Should Be Possible Iii. Line Scan Measurements Across The Wafers Iv. Choice Of The Points Of Measurement On The Wafers Should Be Possible V. Software Related To Installation/ Operation Of In-Situ Tools Should Be Provided As Back-Up In The Form Of A Cloned Hard Disk. Vi. The In-Situ Growth Monitoring System Should Be From Reputed Manufacturer, Preferably From K Space Or Laytec Or Other Reputable Supplier And Should Be Integrated With The Mocvd Equipment Vii. It Should Be Possible To Do Above Measurements On Different Substrates Like (Substrate Type Like, Inp, Gaas) 2. Glove-Box And Load Lock 2.1 Nitrogen Re-Circulation And Purification System 2.2 Glove Box Pressure Should Be Controllable 2.3 Integrated Vacuum Cleaner And Vacuum Wand, Vacuum Tweezers For Holding The Wafer And A Nitrogen Gun 2.4 Load Lock For Substrate And Accessory Transfer 2.5 Integrated Dew Point (H2O) Monitor (-120°C To - 40°C Or Better And O2 Monitor (0 To 500 Ppm) To Measure The Glove-Box Environment 3. Low Pressure Exhaust System 3.1 Pressure Control For Growth Chamber (50-1000 Mbar) With Typical Gas Flows During Growth 3.2 Over Pressure Relief System 3.3 Particulate Filtration System Preferably Two Stages Having Pall Filter 3.4 Should Be Able To Be Leak Tested Separately 3.5 Vacuum Pump Suitable For Growth Preferably, Housed Inside The Equipment Cabinet 4. Control System 4.1 The System Should Be Fully Software Controlled Safety Interlocks With Visual And Audible Alarm 4.2 Pc With Latest Processor Available At The Time Of Delivery, Two 27- Inch Led Monitors, Laser Printer And Appropriate Software 10 4.3 Data Logging Facility. The Logged Data Should Be Displayable Graphically Also 4.4 Software Should Have Provision For Manual Control Also 4.5 Software Should Have The Provision To Edit And Update Run Time Parameters While Running A Process 4.6 Facility For Remote Trouble Shooting Be Provided. 4.7 Upgrade Compatible With The Latest Os Should Be Provided Free Of Cost For Five Years Post Warranty Period. 4.8 Software Related To Installation/ Operation Of The System Should Be Provided As Back-Up In The Form Of A Cloned Hard Disk. 5. Safety System 5.1 Hardwired Or Programmable Safety System 5.2 Software Safety Interlocks With Visual And Audible Alarm 5.3 One Portable Hydrogen Detector With Minimum Detection Limit Of 5 Ppm Or Lower 5.4 Multi-Channel System For Monitoring Hydride Concentration At Ppm Level And Hydrogen Concentration Up To Lower Explosive Limit Each At Five Separate Positions. The Detector Should Give Visual As Well As Audio Alarm And Should Be Integrated Into The Safety System Of The Main Equipment. 5.5 Suitable Pyrolysis Furnace For Cracking Of Mo Should Be Provided In The Exhaust Line. 6. Gas Delivery System 6.1 Made Of Electro-Polished Ss 316 L Tubing With Vcr/Orbital Welding Only 6.2 Hydrogen And Nitrogen Carrier Gas Manifolds, With Point-Of-Use H2 (Pd-Cell) And N2 Purifiers To Achieve The Background-Doping And Mobility Specifications Of Clause 17.2 6.3 Dew Point Monitors (-120 To -40°C Or Better) Should Be Provided In The H2 And N2 Gas Lines. 6.4 Fast Run/Vent Switching Manifolds With Zero Dead Space Allowing Fast Exchange Of Gas For Ultra Sharp Transitions And Thickness Control In Atomic Layer Range 6.5 Differential Pressure Balancing Between Run And Vent Lines For Both Hydrides And Mo Line. 6.6 Purge Channel For Reactor, Heater And Optical Ports 6.7 Leak Test Manifold With Access To All Parts Of The Mocvd System Including Mo And Hydride Lines. 6.8 All The Mfcs Should Be Digital And Metal Sealed 6.9 Equipped With Point Of Use Filters For All Process Gas Lines 6.10 Make Up Line Arrangement For Flow Compensation In Both Hydride And Mo Line. 6.11 Separate Vent And Run Lines For Mos And Hydrides. 6.12 Capable Of Continuous Purging Of All Lines 7. Mo Channels With Pusher 7.1 To Include Source Flow Mfc, Pusher Mfcs, Dilution Mfc And Electronic Source Pressure Controller. 7.2 Two Channels For Tmin With Concentration Monitors On Both Channels. 7.3 Two Channels For Tmal- One Standard And One Double Dilution 7.4 Two Channels For Tmga, (Standard And One Dilution) 7.5 Double Dilution Dopant Channel For Zinc (Dezn/Dmzn, P-Dopant For Iii-As And Iii-P) With Concentration Monitor. 11 7.6 One Double Dilution Complete Mo Channel For Cbr4 (Carbon Pdopant For Gaas, Algaas And Ingaas). 7.7 One Spare Double Dilution Complete Mo Channel For Future Application 8. Mo Carrier Gas Manifold 8.1 Separate Switching Of H2 Carrier Gas For Individual Mo Sources Is Required Which Will Enable Hydrogen To Be Used As Carrier Gas For Each Of The Mo Channel Independently. 9. Constant Temperature Baths 9.1 Re-Circulating Controlled Temperature Baths For Each Of The Mos. (−10 To +60°C With Stability Of ± 0.05°C) 10. Standard Gas Channels 10.1 Two Separate Channels For Hydride (Like Ph3 And Ash3), Suitable For Low Flows. 10.2 Two Separate Channels For Hydride (Like Ph3 And Ash3), Suitable For High Flows. 10.3 One Spare Hydride Channel 11. Double Dilution Gas Channel 11.1 One Double Dilution Channel For Silane (N-Dopant For Iii-As And Iiip) 11.2 One Standard Channel For Silane (N-Dopant For Iii-As And Iii-P) 11.3 One Full Double Dilution Complete Channel For Future Application (E.G., Si2H6 For N-Doping At Low Growth Temperatures) 12. Training 12.1 Prospective Suppliers Must Provide On-Site Training For Complete System Operation And Routine Maintenance And The Epitaxial Materials Growth For At Least One Week After The System Installation And Acceptance. It Is Essential That The Scientist(S) Delivering The Training Are Expert And Fully Conversant With Every Aspect Of Machine Operation, Functionality. 12.2 Growth Of Iii-V Layers. 13. Schematic Of The System The Detailed Schematic Of The Complete System Should Be Provided Along With The Technical Bid. Complete Sets Of Soft And Hard Copy Of Operation And Maintenance Manual Should Be Supplied At The Time Of Delivery Of The System. 14. Installation And Commissioning 14.1 Vendor Should Provide Their List Of Pre Shipment And On-Site Acceptance Tests. 14.2 Vendor Should Visit The Site Prior To Shipment Of The Equipment. 14.3 The Vendor Shall Provide A Detailed Utility Requirement Document Covering Electrical Power And Total Load, Compressed Gas, Exhaust, Vibration Limits, Floor Loading, And Infrastructure Requirements Prior To Shipment. 14.4 Vendor Will Have To Install And Commission The Entire System And Demonstrate The Growth Of Epi-Layers As Per User’S Specifications At User’S Site. 14.5 Training On Reactor Assembly (Both Upper And Lower Part), Reactor Lid/ Head Cleaning, Exhaust In Situ-Tool Installation, Calibration & Testing During The Installation Of The System. 14.6 System Electronics: Trouble Shooting And Maintenance During The Installation Of The System. 12 14.7 Vendor To Provide Suitable Heat Exchanger For The Shower Head And A Chiller For The Rest Of The System. 14.8 Spares Vendor To Provide Consumables Required For One Year Trouble Free Operation. It Should Include Commonly Used Items Like Mfc, Electronic Pressure Controller, Heater, Thermocouples, Quartz Liner, Filters Cartridges For Glove Box As Well As For Exhaust Etc And Other Spares Recommended By The Bidder. In Addition, 2 Number Each Of 2” Dia And 3” Dia And 1 Number Of 4” Dia Sic Coated Graphite Susceptors To Be Provided.