Railways Government Departments Closing in 0 days TDR #55383120

Supply Of IGBT (Insulated Gate Bipolar Transistor)

Issued by Government Departments · Bangalore, Karnataka
Tender Value
Ref. Documents
Estimated cost
Bid Submission
26 May 2026
0 days left
EMD
Ref. Documents
Bank guarantee accepted
Document Fee
Ref. Documents
Non-refundable
Tender Type
Online

Tender Overview

Organization
Click here to view tendering authority
Tender ID
Click here to view tender id
Competition Type
NCB
Bidding Type
Tender
Location / State
Bangalore → Karnataka
EMD Exemption
Not Available
Quantity
Not Available
Website
Click here to view website
Contact Person
Click here to view contact person
Address
Click here to view address

Project Description

Supply Of igbt (insulated gate bipolar transistor) , igbt (insulated gate bipolar transistor) is a three-terminal semiconductor device (gate, collector, emitter) that combines the high-speed switching of a mosfet with the low saturation voltage of a bipolar junction transistor (bjt). specifications: (1) model no:ff1400r17ip4 (2) voltage : 1700 v (3) curren t :1400 a (4) repetitive peak collector current : 2800 a (5) collector-emitter saturation voltage : 1.75 v to 2.2v @ 1400a, 15v (6) gate-emitter peak voltage :20 v (7) module type: half-bridge (dual switch). (8) ope rating temperature: -40 to 150 ?c. (9) internal gate resistor: 1.6 ohm. (10) series/package: prime pac 3. make: infineon, mitsubishi, semikron, abb. [ warranty period: 12 months after the date of delivery ] ]

AI Tender Summary

OUR REF NO 55383120
AUTHORITY Government Departments
TENDER VALUE Ref. Documents
LAST DATE 26-05-2026
Authority
Authority Name Rail Wheel Factory
Work Description Supply Of igbt (insulated gate bipolar transistor) , igbt (insulated gate bipolar transistor) is a three-terminal semiconductor device (gate, collector, emitter) that combines the high-speed switching of a mosfet with the low saturation voltage of a bipolar junction transistor (bjt). specifications: (1) model no:ff1400r17ip4 (2) voltage : 1700 v (3) curren t :1400 a (4) repetitive peak collector current : 2800 a (5) collector-emitter saturation voltage : 1.75 v to 2.2v @ 1400a, 15v (6) gate-emitter peak voltage :20 v (7) module type: half-bridge (dual switch). (8) ope rating temperature: -40 to 150 ?c. (9) internal gate resistor: 1.6 ohm. (10) series/package: prime pac 3. make: infineon, mitsubishi, semikron, abb. [ warranty period: 12 months after the date of delivery ] ]
Basic Detail
Tender No P2265376
Bidding Type Tender
Location
City Bangalore
State Karnataka
Key Dates
Publish Date 07 May 2026
Submission Date 26 May 2026
Open Date 01 Jan 0001
Finance
Tender Value Ref. Documents
Tender Fee Ref. Documents
EMD Ref. Documents
Exemption Not Available
Document List
5089049.pdf
5089053.pdf
5359624.pdf
5359649.pdf
5359666.pdf
5583533.pdf
f8978695-4091-4032-86dd-183783b8bcc4.pdf
AI-generated summary — verify details from the official tender portal before submission.

Unlock Full AI Tender Summary

Get instant access to the complete AI-generated analysis — scope, eligibility, timeline & more.

Instant Access Secure Free
Your details are secure and used only for document delivery.

Tender Timeline

May 07, 2026
11:30 IST

Tender Published

Tender notice published.

Completed
May 26, 2026
17:00 IST

Bid Submission Deadline

Online submission via eProcurement portal.

Completed

Tender Documents

Download All (ZIP) ↓
pdf

5089049.pdf

pdf

5089053.pdf

pdf

5359624.pdf

pdf

5359649.pdf

pdf

5359666.pdf

pdf

5583533.pdf

pdf

f8978695-4091-4032-86dd-183783b8bcc4.pdf

Disclaimer

We takes all possible care for accurate & authentic tender information. However users are requested to refer Original source of Tender Notice / Tender Document published by Tender Issuing Agency before taking any call regarding this tender