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Tender For Mocvd Epitaxy Structure Trench Mosfet, bombay-Maharashtra

Tender Notice

51903863
Tender For Mocvd Epitaxy Structure Trench Mosfet
Tender
Indian
Maharashtra
Bombay
24-10-2025

Tender Details

Tender For Mocvd Epitaxy Structure Trench Mosfet; 10 MOCVD epitaxy structure: Trench MOSFET MOCVD epitaxy structure: Trench MOSFET epi MOCVD epitaxy structure: Trench MOSFET epi on freestanding GaN substrate 1.8-inch Product Specification: An MOCVD epitaxy structure: Trench MOSFET transistor epi structure on freestanding ammonothermal 1.8” GaN Epi structure specification: o Thickness uniformity <(><<)> 10%; o XRD r.c. 002 FWHM not worse than bulk GaN substrate; o EPD not worse than bulk GaN substrate; o It is expected that the proposed Trench MOSFET will have break-down voltage: 1800-2000V; EPI-structure: Layer: « n layer » GaN:Si, Si=(2E18-6E18)/cm3 ; Thickness: 200-300nm; Layer: « p layer » GaN:Mg, Mg=(2E18-2E19)/cm3 (1); Thickness: 300-500nm; Layer: « n- layer » undoped GaN, Na-Nd=1E16/cm3; Thickness: 12μm; Layer: GaN buffer Layer: GaN substrate, 1.8”, EPD<(><<)>=5E4/cm2; Thickness: 500μm; Substrate specification: o n-type 0001 C-plane substrate, CC=1*10^19/cm3; o ammonothermal GaN; o Diameter: 1.8” ; o Thickness 500μm+/-50μm; o Wafer orientation <(><<)>0001>+/-0.3±0.2deg, single side polished; o Resistivity <(><<)> 10E-3 Ω*cm; o TTV/Bow: <(><<)>=25μm/<(><<)>=10μm; o FWHM of X-ray rocking curve ~30arcsec; o Macrodefects = 0; o Etch Pit Density (EPD) <(><<)> 5E4/cm2;

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