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Bids Are Invited For Semiconductor Fabrication Technologies - This Software Shall Be Capable Of Fast And Accurate Simulation Of All Critical Fabrication Processes Used In Modern Semiconductor Technologies Including Rf Deviceshemt Fet Hbt Fet Bjt Jfet, Igb, Ganjam-Odisha

Department Of Skill Development has published Bids Are Invited For Semiconductor Fabrication Technologies - This Software Shall Be Capable Of Fast And Accurate Simulation Of All Critical Fabrication Processes Used In Modern Semiconductor Technologies Including Rf Deviceshemt Fet Hbt Fet Bjt Jfet, Igb. Submission Date for this Tender is 07-07-2025. Customised Software Development Tenders in Ganjam Odisha. Bidders can get complete Tender details and download the document.




Tender Notice

49714985
Bids Are Invited For Semiconductor Fabrication Technologies - This Software Shall Be Capable Of Fast And Accurate Simulation Of All Critical Fabrication Processes Used In Modern Semiconductor Technologies Including Rf Deviceshemt Fet Hbt Fet Bjt Jfet, Igb
Tender
Indian
Odisha
Ganjam
07-07-2025

Tender Documents

Tender Details

Bids Are Invited For Semiconductor Fabrication Technologies - This Software Shall Be Capable Of Fast And Accurate Simulation Of All Critical Fabrication Processes Used In Modern Semiconductor Technologies Including Rf Deviceshemt Fet Hbt Fet Bjt Jfet, Igbt Soi Tft Finfet Etc Multiple Gate Fets Mugfetsfinfet Flexfet Gate All Around Gaa Fetsetc Irdetectorand Sensor Devices Solar Cells Primarily Focused On Compound Semiconductors , Processes - It Should Possess Advanced Physical Models For Following Processes Doping Diffusion Including Rapid Thermal Annealing Rta Ion Implantation Oxidation With Stress Effects Physical Etching And Deposition Eg Cvd Pvd Plasma Etching Rie Etc Epitaxy And Stress Formation And Strain Stress Engineering Optical Lithography These Process Models Shall Be Capable Of Interactive Visualization Of 2D Structures And Distributions As Well As 1D Cross Sections Run Time Extraction Of Process Parameters Optimization Of Process Flow And Calibration Of Process Models Easy Creation And Modification Of Process Flow Input Decks Including Automatic Control Of Layout Gds2 Mask Sequences , Process Materials - It Should Be Capable Of Providing Process Simulation For Variety Of Materials Used In The Semiconductor Industry Like Silicon Iiiv Iiiniivi Iviv But Not Limited To Silicon Carbides Siccompound Semiconductors Eg Gan Algan Gaasalgaas Ingaas Inp Etc Silicon Silicon Germanium Sige All Schottky And Ohmic Contact Metals And Dielectric Insulating Materials Used In Semiconductor Nano Electronics Device Technology , Device Simulation Capability - The Device Simulation Software Should Be Capable Of Analyzing And Characterizing The Electrical Optical And Thermal Performance Of Various Devices In 2D And 3D Fully Integrated With Process Simulation Software Comprehensive Visualization Package And Extensive Database Of Examples Material Parameters And Physical Models For A Wide Range Of Silicon Iii V Iii N Ii Vi Iv Iv Like Compound Semiconductor Materials And Polymer Organic Based Technologies Compatible With Smartspice And Device Other Simulators Spice , Physics Based Models - It Should Cater Physics Based Models Like Drift Diffusion Energy Balance Transport Equations Surface Bulk Mobility Recombination Impact Ionization And Tunneling Models The Capabilities Of All The Physical Models Should Be Extended To Deep Submicron Devices The Models Should Be Capable To Calculate All Measurable Electrical Parameters Which Include Gate And Drain Characteristics Sub Threshold Leakagesubstrate Currents And Punch Through Voltage Breakdown Behavior Kink And Snapback Effects Low Temperature And High Temperature Operation Rf Ac Parameters And Intrinsic Switching Times Boltzmann And Fermi-Dirac Statistics With Band Gapnarrowing , Material Library - It Shall Cover Materials As Per Para 1 3 Library Of Binary Ternary And Quaternary Semiconductors As Well As Other Important Advanced Materials Along With Material Parameters Built In Materials Library That Contains Parameters For All Well-Known Semiconductor Materials , Thermal Effect Simulation - It Should Be Able To Model Heat Generation Heat Flow Lattice Heating Heat Sinks And Effects Of Local Temperature On Physical Constant It Should Provide An Ideal Environment For Design And Optimization Of Power Devices Applications Include Characterization Of Device Design Thermal Failure Analysis And Heat Sink Designs This Module Should Be Capable For Both 2D And 3D Device Simulation , Optoelectronics Device Simulation - It Should Be Able To Model Lightabsorption And Photo Generation In Non Planar Semiconductor Devices It Should Account For Arbitrary Topologies Internal And External Reflections And Refractionspolarization Dependencies And Dispersion Optical Transfer Matrix Method And Em Wave Method For Coherence Effects In Layereddevices It Should Be Applicable To A Wide Array Of Device Technologies Including Ccds Solar Cells Photodiodes Photoconductors Avalanche Photodiodes Metal-Semiconductor Metal Photodetectors Phototransistors Microlens Coupled Detector This Module Should Be Capable For Both 2D And 3D Device Simulation , Circuit Simulation - It Should Contain Physically Based Devices In Addition To Compact Analytical Models It Should Be Compatible To Small And Large Signal Analysis Of Rf Devices It Should Contain Compact Analytical Models For High Power Circuits Including Variety Of Devices Such As Diode Hemt Bipolar Thyristor Gto Mos And Igbt Devices This Module Should Be Capable For Both 2D And 3D Device Simulation , Noise Simulation - It Should Be Capable Of Analyzing Small Signal Noise Generated Within Semiconductor Devices It Should Be Capable Of Characterizing Small Signal Noise Sources And Extract Figure Of Merit For Circuit Designthis Module Shall Preferably Be Capable For Noise Device Simulations , Quantum Mechanical Effect Simulation - It Should Provide A Set Of Models For Simulation Of Various Effects Of Quantum Confinement And Quantum Transport Of Carriers In Semiconductor Devices It Should Allow Quantum Mechanical Calculation Of Bound State Energies And Associated Carrier Wave Functions Self Consistently With Electrostatic Potential Should Associate With Schrodinger Solvers With Non Equilibrium Green Function Negf Approach In Order To Model Ballistic Quantum Transport In 2D Or Cylindricaldevices With Strong Transverse Confinement This Module Should Be Capable For Both 2D And 3D Device Simulation , User Defined Models Andlibrary Elements - It Should Have Capability Of User Defined Physical Models And Material Parameters Via Standard Language Interface Eg C C Plus Etc It Should Have Capability Of User Defined Functions Such As Dopingcomposition Fraction Defect Density Ofstatetemperatureandcompositiondependentbandparametersmobilityrecombinationand Generation Models At Run Time , Run Time Interactive Tool - It Should Have Numerous Simulator Specific And General Debugger Style Tools Such As Powerful Extract Statements Gui Based Process Input Line By Line Runtime Execution And Intuitive Input Syntactical Error Messages Should Support Str File Format For Model Generation , Graphical Display And Analysis Tool - This Tool Should Have Following Capabilities A Powerful Tool Is Required To Visualize 1D And 2D Or 3D Structures Produced By Tcad Simulators It Should Provide Visualization And Graphic Features Such As Pan Zoom Views Labels And Multiple Plot Support Plotting Engine Should Support All Common 1D And 2D 3D Data Views Including2d 3D Contour Data 2D 3D Meshed Data Smith Charts And Polar Charts Exports Data In Many Common Formats Jpg Png Bmp Spice Raw File And Csv For Use In Reports Or By Third Party Tools The Simulation Result Xy Type Data Generated By The Software Should Be In The Format Compatible For Direct Export To Spreadsheet Like Ms Excel Total Quantity : 14

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