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| 1 | Semiconductor Fabrication Technologies | This software shall be capable of fast and accurate simulation of all critical fabrication processes used in modern semiconductor technologies includingRF DevicesHEMT FET HBT FET BJT JFET, IGBT SOI TFT FinFET etcMultiple Gate FETs MuGFETSFinFET FlexFET Gate All Around GAA FETsetcIRdetectorand Sensor devicesSolar cellsPrimarily focused on compound semiconductors |
| 2 | Processes | It should possess advanced physical models for following processesDoping diffusion including rapid thermal annealing RTAIon implantationOxidation with stress effectsPhysical etching and deposition eg CVD PVD plasma etching RIE etcEpitaxy and stress formation and strain stress engineeringOptical lithographyThese process models shall be capable ofInteractive visualization of 2D structures and distributions as well as 1D cross sectionsRun time extraction of process parametersOptimization of process flow and calibration of process modelsEasy creation and modification of process flow input decks including automatic control of layout GDS2 mask sequences |
| 3 | Process Materials | It should be capable of providing process simulation for variety of materials used in the semiconductor industry like Silicon IIIV IIINIIVI IVIV but not limited toSilicon Carbides SiCCompound Semiconductors eg GaN AlGaN GaAsAlGaAs InGaAs InP etcSilicon Silicon Germanium SiGeAll Schottky and Ohmic contact metals and dielectric insulating materials used in Semiconductor Nano electronics device technology |
| 4 | Device simulation capability | The device simulation software should be capable ofAnalyzing and characterizing the electrical optical and thermal performance of various devices in 2D and 3DFully integrated with process simulation software comprehensive visualization package and extensive database of examplesMaterial parameters and physical models for a wide range of Silicon III V III N II VI IV IV like compound semiconductor materials and polymer organic based technologiesCompatible with smartSPICE and device other simulators SPICE |
| 5 | Physics based Models | It should cater Physics based models like drift diffusion energy balance transport equations surface bulk mobility recombination impact ionization and tunneling modelsThe capabilities of all the physical models should be extended to deep submicron devices The models should be capable to calculate all measurable electrical parameters which include gate and drain characteristics sub threshold leakagesubstrate currents and punch through voltage breakdown behavior kink and snapback effects low temperature and high temperature operation RF AC parameters and intrinsic switching timesBoltzmann and Fermi-Dirac statistics with band gapnarrowing |
| 6 | Material Library | It shall cover materials as per para 1 3Library of binary ternary and quaternary semiconductors as well as other important advanced materials along with material parametersBuilt in materials library that contains parameters for all well-known semiconductor materials |
| 7 | Thermal Effect Simulation | It should be able to model heat generation heat flow lattice heating heat sinks and effects of local temperature on physical constantIt should provide an ideal environment for design and optimization of power devicesApplications include characterization of device design thermal failure analysis and heat sink designsThis module should be capable for both 2D and 3D device simulation |
| 8 | Optoelectronics Device Simulation | It should be able to model lightabsorption and photo generation in non planar semiconductor devicesIt should account for arbitrary topologies internal and external reflections and refractionspolarization dependencies and dispersionOptical transfer matrix method and EM wave method for coherence effects in layereddevicesIt should be applicable to a wide array of device technologies including CCDs solar cells photodiodes photoconductors avalanche photodiodes Metal-Semiconductor Metal photodetectors phototransistors microlens coupled detectorThis module should be capable for both 2D and 3D device simulation |
| 9 | Circuit simulation | It should contain physically based devices in addition to compact analytical modelsIt should be compatible to small and large signal analysis of RF devices It should contain Compact analytical models for high power circuits including variety of devices such as diode HEMT bipolar thyristor GTO MOS and IGBT devicesThis module should be capable for both 2D and 3D device simulation |
| 10 | Noise simulation | It should be capable of analyzing small signal noise generated within semiconductor devicesIt should be capable of characterizing small signal noise sources and extract figure of merit for circuit designThis module shall preferably be capable for noise device simulations |
| 11 | Quantum Mechanical effect simulation | It should provide a set of models for simulation of various effects of quantum confinement and quantum transport of carriers in semiconductor devicesIt should allow quantum mechanical calculation of bound state energies and associated carrier wave functions self consistently with electrostatic potentialShould associate with Schrodinger solvers with Non Equilibrium Green Function NEGF Approach in order to model ballistic quantum transport in 2D or cylindricaldevices with strong transverse confinementThis module should be capable for both 2D and 3D device simulation |
| 12 | User defined Models andLibrary elements | It should have capability of user defined physical models and material parameters via standard language interface eg C C plus etcIt should have capability of user defined functions such as dopingcomposition fraction defect density ofstatetemperatureandcompositiondependentbandparametersmobilityrecombinationand generation models at run time |
| 13 | Run time interactive tool | It should have numerous simulator specific and general debugger style tools such as powerful extract statements GUI based process input line by line runtime execution and intuitive input syntactical error messages Should support str file format for model generation |
| 14 | Graphical display and analysis tool | This tool should have following capabilitiesA powerful tool is required to visualize 1D and 2D or 3D structures produced by TCAD simulators It should provide visualization and graphic features such as pan zoom views labels and multiple plot supportPlotting engine should support all common 1D and 2D 3D data views including2D 3D contour data 2D 3D meshed data smith charts and polar charts Exports data in many common formats jpg png bmp SPICE raw file and CSV for use in reports or by third party toolsThe simulation result xy type data generated by the software should be in the format compatible for direct export to spreadsheet like MS excel |
