Science and Technology Statutory Bodies & Commissions/Committees Closing in 0 days TDR #44647563

Tender For Equipments

Issued by Statutory Bodies & Commissions/Committees · pilani, Rajasthan
Tender Value
Ref. Documents
Estimated cost
Bid Submission
03 Sep 2024
0 days left
EMD
Ref. Documents
Bank guarantee accepted
Document Fee
Ref. Documents
Non-refundable
Tender Type
Online

Tender Overview

Competition Type
NCB
Bidding Type
Tender
Location / State
pilani → Rajasthan
EMD Exemption
Not Available
Quantity
Not Available

Project Description

Tender For Equipments; 1. Metal Organic Chemical Vapor Deposition (MOCVD) reactor Wafer Size: 6” Number of wafer to be loaded: 8 Materials to be grown – GaN, in GaN, AlN, AlGaN Substrates: Sapphire, GaN, Si System is required for growth of LED structures for fabrication of micro-LEDs. 2. Gas Cabinets Gas cabinet system for the following gases: NH3, Silane, Arsine, Phosphine, Cl2, BCl3, CF4, SF6 etc. System is required for holding different gas cylinders with auto shut-off option if gas leak is detected. 3. Detector/ sensors Gas Detectors for sensing of following NH3, Silane, Arsine, Phosphine, chlorine, H2, O2, CF4, etc. System is required for detection of toxic poisonous gas leakages. 4. Gas Scrubbers Wet and dry scrubbers for neutralization of toxic gas from MOCVD, PECVD etc. System is required for dilution of toxic gases such as Cl2, BCl3 etc. 5 Chiller 20 KW For the cooling of MOCVD reactor during growth process. 6. H2 Purifiers Generator Hydrogen purifier or generator for generating 99.9999% hydrogen gas High purity hydrogen is required for the growth of high quality epitaxial layers. 7. PL Mapping System (cassette) PL mapping system for wafer mapping of AlN, GaN, inGaN and GaAs, lnP, Si and GaN & GaAs based LED structures Wafer Size: 6 inch. PL mapping system is required for the mapping of epitaxially grown LED/laser structures. 8. Ion implanter Implantation of B, P, Mg, Mg++, N2, Si, Ni, Sn, Ge, Be, Mn etc. System will be used for doping of different impurities in different semiconductor material/ devices. 9. Stealth Laser Dicing For dicing of GaN, sapphire, silicon and diamond wafers. System will be used for the dicing of wafers/ chip separation of semiconductor devices. 10. X Ray inspection System For fault analysis of devices The system will be used for finding of cracks semiconductor devices such as MEMS based sensors. 11. Auto Flip-chip probing and testing system Electro-optical testing/ characterization of micro-LEDs with minimum pad size (n &p) of 6 microns Wafer size: 2-6 inch Micro-LEDs chip Size: 20 micron x 20 micron Emission colors/ wavelength: Blue, Green, Red. For testing/ Characterization of micro-LEDs (flip chip)

AI Tender Summary

OUR REF NO 44647563
AUTHORITY Statutory Bodies & Commissions/Committees
TENDER VALUE Ref. Documents
LAST DATE 03-09-2024
Authority
Authority Name Council Of Scientific And Industrial Research
Work Description Tender For Equipments; 1. Metal Organic Chemical Vapor Deposition (MOCVD) reactor Wafer Size: 6” Number of wafer to be loaded: 8 Materials to be grown – GaN, in GaN, AlN, AlGaN Substrates: Sapphire, GaN, Si System is required for growth of LED structures for fabrication of micro-LEDs. 2. Gas Cabinets Gas cabinet system for the following gases: NH3, Silane, Arsine, Phosphine, Cl2, BCl3, CF4, SF6 etc. System is required for holding different gas cylinders with auto shut-off option if gas leak is detected. 3. Detector/ sensors Gas Detectors for sensing of following NH3, Silane, Arsine, Phosphine, chlorine, H2, O2, CF4, etc. System is required for detection of toxic poisonous gas leakages. 4. Gas Scrubbers Wet and dry scrubbers for neutralization of toxic gas from MOCVD, PECVD etc. System is required for dilution of toxic gases such as Cl2, BCl3 etc. 5 Chiller 20 KW For the cooling of MOCVD reactor during growth process. 6. H2 Purifiers Generator Hydrogen purifier or generator for generating 99.9999% hydrogen gas High purity hydrogen is required for the growth of high quality epitaxial layers. 7. PL Mapping System (cassette) PL mapping system for wafer mapping of AlN, GaN, inGaN and GaAs, lnP, Si and GaN & GaAs based LED structures Wafer Size: 6 inch. PL mapping system is required for the mapping of epitaxially grown LED/laser structures. 8. Ion implanter Implantation of B, P, Mg, Mg++, N2, Si, Ni, Sn, Ge, Be, Mn etc. System will be used for doping of different impurities in different semiconductor material/ devices. 9. Stealth Laser Dicing For dicing of GaN, sapphire, silicon and diamond wafers. System will be used for the dicing of wafers/ chip separation of semiconductor devices. 10. X Ray inspection System For fault analysis of devices The system will be used for finding of cracks semiconductor devices such as MEMS based sensors. 11. Auto Flip-chip probing and testing system Electro-optical testing/ characterization of micro-LEDs with minimum pad size (n &p) of 6 microns Wafer size: 2-6 inch Micro-LEDs chip Size: 20 micron x 20 micron Emission colors/ wavelength: Blue, Green, Red. For testing/ Characterization of micro-LEDs (flip chip)
Basic Detail
Tender No SPO/EOI/SPTG/10-Pur/2024/06
Bidding Type Tender
Location
City pilani
State Rajasthan
Key Dates
Publish Date 08 Aug 2024
Submission Date 03 Sep 2024
Open Date 04 Sep 2024
Finance
Tender Value Ref. Documents
Tender Fee Ref. Documents
EMD Ref. Documents
Exemption Not Available
Document List
465294e3-2420-4f12-8ee7-88231bfb8dcd.html
EOIM6.pdf
Tendernotice_1.pdf

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Tender Timeline

Aug 08, 2024
11:30 IST

Tender Published

Tender notice published.

Completed
Sep 03, 2024
17:00 IST

Bid Submission Deadline

Online submission via eProcurement portal.

Completed
Sep 04, 2024

Bid Opening Date

Technical bids will be opened and evaluated.

Completed

Tender Documents

Download All (ZIP) ↓
html

465294e3-2420-4f12-8ee7-88231bfb8dcd.html

pdf

EOIM6.pdf

pdf

Tendernotice_1.pdf

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