New and Renewable Energy Government Departments Closing in 0 days TDR #35844907

Bids Are Invited For Electronic Component Mse 1. Field Effect Transistor 2N 453 , 2. Transistor Mps 8598 , 3. Transistor Mps 8099 , 4. Ic Lf 398 , 5. Ic Op. Amp. Lf 356 , 6.Capacitor 220 Micro Farad, 250V Ac , 7. 20A Schottky Barrier Rectifier, Mbr20100ct

Issued by Government Departments · Kota, Rajasthan
Tender Value
Ref. Documents
Estimated cost
Bid Submission
23 Mar 2023
0 days left
EMD
Ref. Documents
Bank guarantee accepted
Document Fee
Ref. Documents
Non-refundable
Tender Type
Gem

Tender Overview

Competition Type
NCB
Bidding Type
Tender
Location / State
Kota → Rajasthan
EMD Exemption
Not Available
Quantity
Not Available

Project Description

Bids Are Invited For Electronic Component Mse 1. Field Effect Transistor 2N 453 , 2. Transistor Mps 8598 , 3. Transistor Mps 8099 , 4. Ic Lf 398 , 5. Ic Op. Amp. Lf 356 , 6.Capacitor 220 Micro Farad, 250V Ac , 7. 20A Schottky Barrier Rectifier, Mbr20100ctp , 8. Transistor Bd139 , 9. Transistor Bd140 , 10. Ic Lm 318, General- Purpose Operational Amplifier , 11. Transistor P13009a , 12. High Voltage Diffused Silicon Rectifier Gi250-4 , 13. Sensistor 1K Ohms , 14. Ic Ultra Compact Precision , 15. Transistor 2N 4403 Total Quantity : 300

Corrigendum

Sr No Corrigendum Date Corrigendum Type New Submission Date
1 24-Feb-2023 03-Mar-2023
2 09-Mar-2023 23-Mar-2023

BOQ

Sl. No. Item TitleItem Description
11. Field Effect Transistor 2N 453Field Effect Transistor 2N 453
22. Transistor MPS 8598Transistor MPS 8598
33. Transistor MPS 8099Transistor MPS 8099
44. IC LF 398IC LF 398
55. IC Op. Amp. LF 356IC Op. Amp. LF 356
66.Capacitor 220 micro farad, 250V ACCapacitor 220 micro farad, 250V AC
77. 20A SCHOTTKY BARRIER RECTIFIER, MBR20100CTP20A SCHOTTKY BARRIER RECTIFIER, MBR20100CTP
88. Transistor BD139Transistor BD139
99. Transistor BD140Transistor BD140
1010. IC LM 318, General- Purpose Operational AmplifierIC LM 318, General- Purpose Operational Amplifier
1111. Transistor P13009ATransistor P13009A
1212. High Voltage diffused Silicon Rectifier GI250-4High Voltage diffused Silicon Rectifier GI250-4 as per attached specifiaction.
1313. Sensistor 1k OhmsSensistor 1k Ohms , 5%, 1/8W, Type-TM1/8-102J
1414. IC Ultra compact PrecisionIC Ultra compact Precision +5V, Voltage reference ADRC2ARZ
1515. Transistor 2N 4403Transistor 2N 4403

AI Tender Summary

OUR REF NO 35844907
AUTHORITY Government Departments
TENDER VALUE Ref. Documents
LAST DATE 23-03-2023
Authority
Authority Name Department Of Atomic Energy
Work Description Bids Are Invited For Electronic Component Mse 1. Field Effect Transistor 2N 453 , 2. Transistor Mps 8598 , 3. Transistor Mps 8099 , 4. Ic Lf 398 , 5. Ic Op. Amp. Lf 356 , 6.Capacitor 220 Micro Farad, 250V Ac , 7. 20A Schottky Barrier Rectifier, Mbr20100ctp , 8. Transistor Bd139 , 9. Transistor Bd140 , 10. Ic Lm 318, General- Purpose Operational Amplifier , 11. Transistor P13009a , 12. High Voltage Diffused Silicon Rectifier Gi250-4 , 13. Sensistor 1K Ohms , 14. Ic Ultra Compact Precision , 15. Transistor 2N 4403 Total Quantity : 300
Basic Detail
Tender No GEM/2022/B/2898393
Bidding Type Tender
Location
City Kota
State Rajasthan
Key Dates
Publish Date 09 Mar 2023
Submission Date 23 Mar 2023
Open Date 23 Mar 2023
Finance
Tender Value Ref. Documents
Tender Fee Ref. Documents
EMD Ref. Documents
Exemption Not Available
Document List
4175737_Boq_3.xlsx
0359a864-5b07-4da4-9896-41e73c9b104b.pdf

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Tender Timeline

Mar 09, 2023
11:30 IST

Tender Published

Tender notice published.

Completed
Mar 03, 2023
18:00 IST

Corrigendum-1 Issued

Clarifications on tender conditions and amendments issued.

Completed
Mar 23, 2023
18:00 IST

Corrigendum-2 Issued

Clarifications on tender conditions and amendments issued.

Completed
Mar 23, 2023
17:00 IST

Bid Submission Deadline

Online submission via eProcurement portal.

Completed
Mar 23, 2023

Bid Opening Date

Technical bids will be opened and evaluated.

Completed

Tender Documents

Download All (ZIP) ↓
xlsx

4175737_Boq_3.xlsx

pdf

0359a864-5b07-4da4-9896-41e73c9b104b.pdf

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