Microelectronic Machinery And Apparatus - Acquisition Of An Ion Implantation Equipment By Plasma Immersion (Piii). The Piii Technique Consists Of The Accurate Implementation Of Doping Ions (Such As Boron, Phosphorus Or Arsenic) In Semiconductor Materials. The Ntc Works Specifically On The Manufacture Of Photonic Devices And For The Moment It Does Not Have This Technique Or Any Similar To Carry Out “Doping” Of The Components It Manufactures. It Would Be A New Technique Allowing Improvements In The Quality And Characteristics Of The Manufactured Photonic Components. The Main Element Of A Photonic Component Is The Wave Guide That Is Usually Made On Silicon (Or Silicon Nitride) And This Technique, Implementing Ions Of Different Materials Within These Guides, Would Allow Modifying The Refraction Index Of The Silicon And Improving Its Properties. As An Example Of Possible Future Application, The Ntc Would Have The Ability To Implement Materials Such As Erbium Within Silicon Wave Guides To Manufacture Integrated Optical Amplifiers, Which Are Essential In Fiber Optic Communication Systems To Compensate For Signal Loss To Long Distances. Since Photonics Often Involves Heat -Sensitive Materials, Piiis Ability To Operate At Low Temperatures Is A Great Advantage, Since It Avoids Thermal Damage To The Devices. In Addition, The Piii Technique Is Scalable And Can Be Applied To Large Wafers, Which Makes It Appropriate For Mass Production Of Photonic Devices. The Ntc Would Need A Piii Team That Allows Processing With 8 -Inch Diameter Wafers Making It Compatible With The Equipment That Has Been Incorporated Lately And Working With Wafers Of This Size. Having These Capabilities Would Involve An Important Internal Improvement Of The Institute And At The Same Time Would Allow Offering A More Complete Service To External Users, Both Research Groups And Companies. Having A Tool That Allows Us To Modify The Properties Of Wave Guides Would Increase The Services Offered, Ensuring Their Quality. Likewise, It Would Facilitate Access By The Research Groups Of The Institute To Competitive Research Projects That Are Currently Difficult Because Of The Lack Of This Team. The Requested Infrastructure Would Put The Ntc Facilities On The First Technological Level And At The Same Time With Leading Centers In Photonics And Communications. Improving Optical Circuit Manufacturing Capabilities With Different Types Of Doping In Wafers Up To 8 Inches (Compatible With Manufacturing In 6 -Inch And Sampling Wafers) Would Mean A Uniqueness Of The Ntc, Which Would Make It Stand Out At European Level. In Short, The Acquisition Of The Requested Equipment Will Allow To Innovate The Capacities Of The Requesting Institute, Thus Allowing To Continue At The Forefront Of Photonics In Europe, Both In Scientific Production And Manufacture Of Important Series Of Integrated Photonic Circuits And In Technological Transfer. The Acquisition Of This Im Team
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