Tenders Are Invited For Special-Purpose Machine Tools-Delivery Of Two Identical Advanced Surface Grinding Systems Designed Specifically For Grinding Semiconductor Substrates, Such As Gallium Nitride (Gan) And Silicon Carbide (Sic).

Special-Purpose Machine Tools-Delivery Of Two Identical Advanced Surface Grinding Systems Designed Specifically For Grinding Semiconductor Substrates, Such As Gallium Nitride (Gan) And Silicon Carbide (Sic).. Please Scroll Down For The English Version The Subject Of The Order Is Delivery Of Two Identical Advanced Surface Grinding Systems Designed Specifically For Grinding Semiconductor Substrates Such As Gall Nitride (Gan) And Silicon Carbide (Sic). Purchase Of Two Identical Grinders: Requirements For The Specifications Of The Grinders • The Grinder Is Designed Specifically For Grinding Semiconductor Wafers, Such As Gall Nitride (Gan) And Silicon Carbide (Sic). • Single -Shaped Grinder For Processing Waffles Individually • The Ability To Process Waffle With A Diameter Of 25 Mm To 150 Mm • Possibility To Use Grinding Discs From Any Supplier Dimensions Of The Grinder: • Base Area: Less Than: 1.5 M (Width) X 2.2 M (Main) X 2.5 M (Height) • Weight: Less Than: 5 Tons Of Sanding Platform: • Spindles: At Least 1 Μm/500 N • Rated Moment:> 22 Nm • Adjusting The Slope Of The Grinding Disc In Axis With 3-Point Support • Feed Speed: 5 Mm/S • Cutting: 0.01– (10.0) Μm/S • Resolution For The Axis With: 0.01 Μm Measurement Of The Thickness Of The Wafer: • Function Measurement Function. Real Time Working Table: • Rotational Speed: Minimum 300 Rpm • Supported Sizes Of Workpiece, Available Working Tables: Ø 25.4 Mm Ø 49 Mm Ø 50.8 Mm Ø 101.6 Mm • Porsatu Material: Ceramics Grinding Shield: • Diameter Of The Grinding Disc: From 200 Mm To 300 Mm • Discable Speed: Minimum 2500 Rpm • Required Adjustment Of The Slope Of The Grinding Disc: Osi Unit Z (Column) With 3-Point Support • Possibility Of Adjustment Of The Table Inclination • Repeatability: 0.5 Μm Detailed Description Of The Subject Of The Contract Is Located 3 Swz English Version The Subject Of The Order Is The Delivery Of Two Delivery Of Two Identical Advanced Surface Grinding Systems Designed For Grinding Semiconductor Substrates Such As Gallium Nitride (Gan) And Silicon Carbide (Sic). Purchase Of Two Identical Grinders: Requirements For Grinder Specifications • Grinder Designed Specifically For Grinding Of Compound Semiconductor Wafers Such As Gallium Nitride (Gan) And Silicon Carbide (Sic) Capable To Process Wafer Diameters From 25Mm Up Is 150Mm • Capable To Use Grind Wheel From Any Major Supplier Footprint: • Footprint Less Than 1.5M (W) X 2.2M (D) X 2.5M (H) • Weight: Less Than 5 Tons Grind Platform: Rigidity At Least 1Μm/500N • Ratted Torque:> 22Nm • Grind Wheel Tilt Adjustable In Z-Axis W/3-Point Support • Speed ​​Movement ： 5Mm/Secm/Sec • Cutting ： 0.01– (10.0) Μm/Sec Thickness Measurement: • Real Time Workpiece Thickness Measurement Function Work -Table: • Table Rotation Speed: Min. • Porous Material: Ceramic Grind Wheel: • Grind Wheel Diameter: 200-300Mm • Grind Wheel Rotation Speed: Min.

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Global Tender Document	Tender Notice