Tenders Are Invited For Microelectronic Machinery And Apparatus - Acquisition Of An Atomic Layer Deposit Equipment (Ald) Of Aluminum Oxide, Titanium Oxide And Hafnio Oxide

Microelectronic Machinery And Apparatus - Acquisition Of An Atomic Layer Deposit Equipment (Ald) Of Aluminum Oxide, Titanium Oxide And Hafnio Oxide. The Current Ability To Perform Deposits Of Dielectric Materials At The Ntc Institute At Micro/Nanometric Scale And Wafer Level Is Limited To Chemical Techniques In Vapor Phase (Cvd). Improved Steam Deposit Equipment With Plasma Is Available, Which Offers Thin Dielectric Films. The Ald Process Consists Of The Growth Of A Thin Film By Consecutive Atomic Layers. The Fact Of Having An Ald Team That In Addition To Increasing The Manufacturing Capacity, Will Offer Uniformity And Compliance Of The Film On Any Scale And Would Have A Clear Impact On The Quality Of The Research Carried Out As Well As On The Capabilities Offered By The Ntc Institute Would Be Very High. Ald Is The Most Advanced Technique In Thin Film Coating Due To The Precise Control Of The Film Thickness (Nm) It Offers. The Films Produced By This Technique Are Dense, Without Pores And Without Defects, And The Conditions In Which The Process Is Carried Out, 1-10 Hpa 200-400ºc, Are Soft Enough To Be Used With Sensitive Substrates. This Type Of Process Is Also Fundamental When Working With External Customers And Providing Quality Controls And Technical Specifications Of Manufactured Devices. As The Semiconductor Industry Continues To Evolve, The Increasingly Fine Size Of The Devices Makes It Especially Important To Find Or Develop More Advanced Techniques For Growth Of Fine Films That Require Low Temperature, Great Precision In The Thickness Of The Film And An Excellent Conformability In Three -Dimensional Structures (3D). Therefore, This Center Lacks Necessary Equipment That Allows Ensuring The Quality And Compliance Of Specifications At The Nanometric Level During The Manufacturing Process. To Replace These Deficiencies, The Acquisition Of An Atomic Layer Deposit Equipment Of Several Oxides Is Requested.