Tenders Are Invited For Laboratory, Optical And Precision Equipments (Excl. Glasses) – Icp-Rie Plasma Etching System For Cryogenic Dry Etching Of Silicon, Silicon Dioxide, Etc.

Laboratory, Optical And Precision Equipments (Excl. Glasses) – Icp-Rie Plasma Etching System For Cryogenic Dry Etching Of Silicon, Silicon Dioxide, Etc.. The Subject Of The Order Is An Icp-Rie Plasma Etching System For The Structuring Of Micro- And Nano-Optical Elements, Specifically Proportional And Binary Plasma Etching In Dielectric, Semiconducting Materials And Functional Layers (Quartz Glass /Fused Silica, Silicon, Sioxny, Silicon Carbide, High-Index Materials Such As Ta2o5, Nb2o5, Etc .) Using Fluorine-Based Reactive Gas Processes Also, But Not Exclusively Cryogenic Temperatures Around -130°C. The System With A Loading Lock (Loadlock, Ll) Must Enable The Processing Of Variable Substrate Sizes Using A Carrier Without A Lot Of Processing And Time Expenditure. A Quick, Variable Change In Substrate Electrode Cooling Between Cooling Using A Cryogenic Thermostat And Liquid Nitrogen Is Desirable. At Least There Must Be The Possibility Of Retrofitting To Liquid Nitrogen Cooling Without Structural Changes To The Substrate Electrode. For Further Information See Appendix 2.