Tenders Are Invited For Checking And Testing Apparatus – Delivery Of Two Reactors For Gas Phase Epitaxy Using Metal-Organic Compounds (Movpe).

Checking And Testing Apparatus – Delivery Of Two Reactors For Gas Phase Epitaxy Using Metal-Organic Compounds (Movpe).. Please Scroll Down For The English Version The Subject Of The Order Is Equipment Intended For Epitaxial Growth Of Gan-Based Materials (Gan, Algan, Ingan). The Equipment Consists Of A 3X2” Substrate Configuration, A Source Material Delivery Control System That Includes 8 Metal-Organic (Mo) Lines (Minimum 6 Lines), 2 Hydride Line Systems, A Horizontal Reactor With Glovebox + Pass-Through Chamber, A Zoned Resistance Heating System, A Vacuum Pump System, A Full Safety System And A Computer Measurement And Control System. The Reactor Requires A Horizontal Flow Channel Type, Which Should Be Constructed In Three Parts (Initial, Middle And End), And The Middle Part Should Be Replaceable For Ease Of Maintenance. The Gas Injection Should Be Triple To Control The Homogeneous Gas Phase. The Contractor Should Provide The Following Reference Data: 1. Growth Rate Above 2 Μm/H With A Simultaneous Low Carbon Concentration (<10¹⁶ Cm⁻³). 2. To Control The High Al Content In The Range Of 50 ~ 80%, Keep The V/Iii Ratio Constant Above 1400 And The Growth Rate Above 3 Μm/H. 3. Aln Layer Crystallizing With A Growth Rate Above 15 Μm/H. 4. *N-, P-Doped Gan, Algan, Ingan Layers Crystallized At Atmospheric Pressure. English Version The Subject Of The Order Is Equipment Used For Epitaxial Growth Of Gan-Based Materials (Gan, Algan, Ingan). The Equipment Consists Of 3X2” Wafer Configuration, Source Material Supply Control System Which Includes 8 Metalorganic (Mo) Line Systems (At Least 6 Lines), 2 Hydride Line Systems, A Horizontal Reactor With A Glove-Box + A Pass-Box, A Resistance Zone Heating System, A Vacuum Pumping System, A Full Safety System, And A Computer Measuring And Control System. Reactor Requires Horizontal Flow Channel Type, Those Parts Should Be Structured Three Parts (Upstream, Middle And Downstream) And Middle Parts Can Be Replacement For Easy Maintenance And Gas Injection Should Be Triple Flow Injected To Control Uniform Gas Phase. Contractor Should Supply The Following Reference Data 1. Growth Rate Over 2 Um/H With Low Carbon Concentration (<1016 Cm-3) Simultaneously 2. To Control High Al Content 50 ~ 80% Range, Keep Constant V/Iii Ratio “Over 1400 ” And Growth Rate “Over 3 Um/H” 3. Alnlayer Grown Over 15 Um/H As Growth Rate 4. *N-, P- Doped Gan, Algan, Ingan Able To Grow Under Atmospheric Pressure