Tenders Are Invited For Microelectronic Machinery And Apparatus And Microsystems – Supply Of Ion Beam Etching System (Ibe)

Microelectronic Machinery And Apparatus And Microsystems – Supply Of Ion Beam Etching System (Ibe). The Equipment Will Be Allocated To The Singular Scientific And Technical Infrastructure (Icts) Micronanofabs, A Spanish Network Of Micro And Nanofabrication Clean Rooms Integrated Into The National Icts Map Of The Ministry Responsible For Science, Of Which The Micro And Nano Manufacturing Infrastructure Of The Nanophotonic Technology Center (Ntc) Of The Universitat Politècnica De València (Upv) Is A Part, Together With The National Microelectronics Center (Csic) And The Isom Technology Center (Upm). The Installation Will Be Located In The White Room Of Building 8F Of The Ntc-Upv. The Nanophotonic Technology Center Develops Manufacturing Processes For Integrated Photonic Devices, Biosensors, Integrated Optics Components, Quantum Devices, Microelectromechanical Systems (Mems), Microfluidic Structures And Nanophotonic Systems On A Wide Variety Of Materials, Including Silicon, Silicon Nitride, Glass, Quartz, Iii-V Materials, Dielectric Materials And Hybrid Structures. As Icts Integrated Into The Micronanofabs Network, The Ntc-Upv Provides Micro- And Nanomanufacturing Services To National And International Research Groups, As Well As Companies, Within The Framework Of Competitive Projects, Technology Transfer Contracts And Provision Of Advanced Services. This Condition Of Unique Shared-Use Infrastructure Requires Maintaining An Updated, Robust Instrument Set With Features In Line With The State Of The Art, Which Allows Responding To Both Our Own Lines Of Research And The External Demand Of The Scientific And Industrial Community, In Line With The Objectives Of The Perte Chip For The Strengthening Of National Microelectronics And Photonics Capabilities. Many Of The Devices Manufactured In The Infrastructure Require High-Precision Physical Etching Processes On Materials For Which Conventional (Wet) Chemical Etching Processes Do Not Provide The Necessary Surface Quality, Anisotropy Or Selectivity. Likewise, The Increasing Complexity Of The Devices Developed Requires Highly Reproducible Processes, With Precise Control Of The Angle Of Incidence Of The Beam, High Process Stability, Automation And Continuous Monitoring.