Tenders Are Invited For Machinery For The Heat Treatment Of Materials – High Temperature/ Lp-Cvd System For Microsystem Technology And Nanotechnology

Machinery For The Heat Treatment Of Materials – High Temperature/ Lp-Cvd System For Microsystem Technology And Nanotechnology. 1 Stk High-Temperature System With 8 Process Stations / Tubes With Loading Devices For High-Temperature And Lp-Cvd Processes, Primarily For Monocrystalline Silicon Wafers. - Footprint Of The Entire System Not Larger Than 400Cm X 600Cm X 295Cm (L X W X H). - If The Entire System Consists Of Several Individual Systems/Parts, All Systems Must Be Able To Be Set Up Within The Specified Footprint. - The Only Exceptions To The Specified Footprint Are Any Control Console, Which May Be Accommodated Separately On A Table Measuring Max. 180Cmx80cm, And The Vacuum Pumps, Which May Be Accommodated Within A Service Area. - For Two Coupled Individual Systems: A Configuration Mirrored On The Rear Wall Must Be Provided (One System With Loading Stations On The Right, One System With Loading Stations On The Left) - All 8 Process Stations Must Be Designed For The Parallel Processing Of At Least 13 Wafers Per Process. - The Processable Diameters Of The Wafers Are At Least: O 150Mm And O 100Mm - The Process Stations Are To Be Provided As Horizontally Arranged Process Tubes, Each With A Quartz Or Sic Tube And Each With An Automatic/Motorized Loading Station. - The Boom (Paddle) For Loading Must Be Made Of Silicon Carbide. - The Loading Station(S) Must Be Provided With Air Filter Unit(S) With Laminar Air Flow. - Each Process Station Must Be Designed With At Least 3 Temperature Control Zones Per Process Pipe. - Every Lp - Cvd Process Pipe Must Be Implemented With An Integrated Leak Rate Test / Pressure Loss Profiling. - Within The Processing Zone Of At Least 13 Process Wafers (Flat Zone), A Temperature Deviation From The Target Value Of At Most +/-1 K And A Target Temperature Deviation From Run To Run Of At Most +/-1 K Must Be Achieved In The Process. - At Least One Suitable Thermocouple Per Temperature Control Zone For Process Monitoring And Control Must Be Present. - At Least One Suitable Thermocouple Per Temperature Control Zone Must Be Present As A Fail-Safe. - At Least One Profile Thermocouple Per Process Station - Suitable Measuring Devices For System Monitoring And Control With Regard To Technical Safety (E.G. Overtemperature Shutdown, Exhaust Air Failure, Cooling Water Failure, Gas Supply Failure, Redundant Interlocks...) Must Be Available. - In The Gas Cabinets, State-Of-The-Art Process Gas Supply And Distribution, Process Gas Control And Monitoring Must Be Implemented, Tailored To The Properties Of The Process Gases And Liquids Specified For The Process Stations. - Extraction / Scavenger At The Process Station - System Control(S) With Monitor And User Interface, At The Latest After The Warranty Has Expired, All User And Service Levels Must Be Permanently Accessible To The Whz - Several Process Stations Can Be Combined In One Control/User Interface - In The Event Of A Malfunction, The System Must Automatically Switch To A Safe State