GTR 113842562

Tenders Are Invited For Terahertz Low-Noise Amplifier

ICB — International Competitive Bid Closes Aug 20, 2026 Western Europe
Tender Information
GTR Reference
113842562
Tendering Authority
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Tender No
1-13382
Financer Name
Self-Funded
Work Title
Tenders Are Invited For Terahertz Low-Noise Amplifier
Bid Type
ICB — International Competitive Bid
Country
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Geographical Region
Western Europe
Political Region
European Union
Last Date of Bid Submission
20-08-2026
Work Detail
Tenders are invited for Terahertz Low-Noise Amplifier - Expro+ Objective: To develop a low-noise amplifier (LNA) to approaching the THz boundary and to optimize the LNA noise performance by process evolutions and advanced design.Description: Continuous advancements in semiconductor technologies like Indium Phosphide (InP) and Gallium Arsenide (GaAs) pseudo-morphic and metamorphic high electron mobility transistors (pHEMT and mHEMT) have made low-noise amplifiers (LNA) possible at increasingly higher frequencies. Currently efforts are taken to reach frequencies close to 1 THz. Aggressive reduction of the gate length has been essential in this progress and gate-lengths have already been realized experimentally in 20 nm scale in a previous ESA project (ref. no. T106-603EF). Availability of low-noise amplifiers (LNA) at sub-mm wave frequencies and above 600 GHz is needed for future space-borne radiometers for Earth observation for three reasons: Firstly, employment of a low-noise pre-amplifier in front of a Schottky mixer allows improvement in receiver sensitivity. Secondly, substantial reduction of Local Oscillator (LO) power requirement is possible in heterodyne receivers by allowing low-barrier Schottky technology in the down-conversion. This can facilitate multipixel heterodyne instruments based on microwave photonics downconverter and centralized photonics LO. Thirdly, LNAs make direct-detection radiometers possible, allowing significant simplification of the receiver architecture, as nolocal oscillator will be needed. At system level, in complex heterodyne instruments, the LNA also helps in reducing backward leakage of the local oscillator signal, therefore improving system auto-compatibility. This activity aims at pushing the LNA technology towards THz regime based on the emerging state-of-the-art technologies and design skills. LNA demonstrators in this activity are designed, manufactured and tested at two dedicated frequencies in the vicinity of 1 THz. This activity encompasses the following tasks: - Review the latest mHEMT process evolutions - Optimize the LNA noise performance by process evolutions and advanced design. - Design, manufacture and test a low-noise amplifier (LNA) at three frequencies of interest: 770 GHz, 874 GHz and 1.1 THz. - Compare the results with current state-of-the-art, derive lessons learned and provide roadmap for future related activities. Read less Tender Link : https://esastar-publication-ext.sso.esa.int/ESATenderActions/filter/open
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