Dry-Etching Equipment – Reactive Ion Etching System. Reactive Ion Etching System (Reactive Ion Etching) - 1 Pc. The Icp-Rie Engraving System Will Be Used For The Development And Fabrication Of Micro- And Nanostructures With Applicability In Areas Such As Micro- And Nanoelectronics, Optoelectronics, Photonics, As Well As Sensor Applications. The System Must Allow The Anisotropic, Selective And Reproducible Etching Of A Wide Range Of Materials: Polymers (Ex: Pmma, Su-8), Metal Oxides (Ex: Sio2, Al2o3, Hfo2, Tio2, Zno, Cuo), Metal Nitrides (Ex: Aln, Tin), Metals (Cr, Ti) And Dichalcogens Of Transition Metals (Ex: Mos₂). The System Must Offer The Following Essential Capabilities: A) The System Must Be Able To Process Samples With Dimensions Up To A Minimum Of 200 Mm; B) The System Must Allow The Processing Of A Wide Range Of Target Materials (Polymers, Metal Oxides, Metal Nitrides, Metals And Transition Metal Dichalcogens), Commonly Used In Micro- And Nanofabrication Applications. To Ensure Such Functional Versatility, The System Must Be Designed To Be Fully Compatible With Fluorinated Reagent Gases And Chlorine-Based Gases. The Configuration Of The Process Chamber And Gas Circuits Must Allow For Alternating Between The Two Types Of Chemistries Within The Same Reaction Chamber, Without Compromising The Purity Of The Process, Without Generating Cross-Contamination, And Without Affecting The Reproducibility Or Efficiency Of The Etching Process; C) Supported Gases Shall Include: Ar, O₂, Sf₆, Cf₄, Chf₃, Cl₂ And Bcl₃ (Heated). D) The Vacuum System And The Gas Supply System Must Ensure Safe And Easy Switching Between The Two Types Of Chemistries Within The Same Reaction Chamber, Without Requiring Hardware Modifications Or The Use Of Dedicated Equipment For Each Class Of Reagents.
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