Tenders Are Invited For Development Of A European Sic Substrate Source

Tenders are invited for Development of a European Sic Substrate Source for Gan MMICS - Expro+ Objective: To develop European high-purity semi-insulating SiC substrates for manufacturing of GaN MMICs.Description: Gallium Nitride (GaN) Monolithic Microwave Integrated Circuits (MMIC) are key components for all space applications and are commonly used in Synthetic Aperture Radar (SAR) for Earth Observation satellites and in Solid State Power Amplifiers (SSPA) for Navigation, Telecommunication and Science missions. Currently, European GaN MMIC foundries are dependent on non-european sources for HPSI (High-purity semi-insulating) Silicon Carbide (SIC) substrates needed as base material for Gallium Nitride (GaN) epitaxial growth and manufacturing of high performance GaN MMICs. This dependency on non-European material is identified as a major risk for future availability of European GaN-on-SiC MMICs. The objective of this activity is to develop a European source for HPSI 4" SiC substrates satisfying the needs of European GaN foundries in terms of substrate quality, availability and cost. This activity encompasses the following tasks: - Market analysis for the definition of the user needs - Baseline process definition (crystal growth, material purification and substrate processing) and preliminary validation - SiC substrate growth and processing trials - SiC Substrate quality characterization (insulation, bowing, defects density, etc.) - Assessment of suitability with respect to epitaxial GaN growth - Industrialisation roadmapdefinition.Deliverables: Breadboard, Reporthttp://www.esa.int/About_Us/Business_with_ESA/Small_and_Medium_Sized_Enterprises/Opportunities_for_SMEs/Procurement_policy_on_fair_access_for_SMEs_-_the_C1-C4_Clauses Read less Tender Link : https://esastar-publication-ext.sso.esa.int/ESATenderActions/filter/open