Tenders are invited for Gan Hemt Threshold Voltage Stabilisation for High Fidelity Signal Quality Expro plus To characterise and develop a generic stabilisation methodology for GaN HEMTs used in navigation payloads.Description:Gallium Nitride (GaN) Monolithic Microwave Integrated Circuits (MMIC) are critical enabling components for current and future Positioning, Navigation and Timing (PNT) systems. GaN High-electron mobility transistors (HEMT) are prone to early life threshold voltage shift generally attributed to charge trapping effects. Depending on the MMIC design and operating conditions (temperature, DC bias,RF power) this threshold voltage shift has been shown to alter device RF performance beyond acceptable drift limits. Exact root cause and generic methodology for threshold voltage stabilisation has not been established so far by manufacturers or end-users leading to increased risk and qualification effort of the components for space missions. The objective of this activity is to fully characterise trapping related degradation mechanisms in GaN MMICs and develop a generic stabilisation methodology available for all end-users. This activity encompasses the following tasks: - Selection of test devices for implementation on MMIC single stage amplifier - Characterisation test campaign - Generic screening procedure definition Read less Tender Link : https://esastar-publication-ext.sso.esa.int/ESATenderActions/filter/open
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