Tender For Mocvd Epitaxy Structure Gan Ld; 10 MOCVD epitaxy structure: GaN LD MOCVD epitaxy structure: GaN LD on free-standing GaN substrate – standard 405nm; Product Specification: MOCVD epitaxy structure: 450nm Laser Diode epi on 2” freestanding GaN Epi structure specification: 1. The epi structure will be grown on the n-type bulk GaN provided by Seen Semiconductors; 2. The final EPD level of the epi-structure will be the same as of the substrate; 3. The epi laser structure will allow for emission of laser light in the 450nm +/-10nm range with the std deviation of +/-5nm for each laser; 4. Epi specification provided by Seen Semiconductors Ltd. Seen Semiconductor will remain owner of the specification. Thickness and doping of layers will be provided in the after production report with the exception of some details which will remain confidential due to the fact that Seen is not the full owner of the specification; 5. Doping level uniformity <(>&<)> tolerance: 20%; 6. Mole fraction uniformity: 2% (in QW: 4%); 7. Mole fraction tolerance: 0.4% (in QW: 2%); 8. Epi Layer Thickness uniformity <(>&<)> tolerance: 5% (for thick layers), 10% (for QWs), 20% (for EBL); LD MQW EPI-structure: subcontuct layer GaN:Mg, Mg:1x10^20/cm3; 10nm; p-cladding AlGaN:Mg; 850nm; electron blocking layer AlGaN:Mg; 20nm; waveguide core GaN:Mg; 100nm; undoped GaN QB; 6nm; 2QW – InGaN 2.5nm, QB-GaN 6nm; waveguide core InGaN; 100nm; n-cladding AlGaN:Si; 460nm; n-type bulk GaN substrate 2”, 400 μm; Epi structure characterization (free of charge): o Nomarski; o HRXRD – 2ThetaOmega 002 – for content and thickness of Al in claddings and In in QW; o Photoluminescence measurement – wavelength, quality of quantum wells; Free-standing GaN substrate specification: o n-type 0001 C-plane substrate, CC=1-3*10^18/cm3; o Diameter: 2” (50.8mm); o Production Grade; o Thickness 400μm+/-30μm; o Wafer orientation <(><<)>0001>+/-0.5±0.2deg, single side polished; o Resistivity <(><<)> 30mΩ*cm; o TTV/Bow: <(><<) >=15μm/<(><<)>=10μm; o Macrodefects = 0; o XRD r.c. FWHM 002 <(><<)> 80arcsec; o EPD ~(1-3)E7/cm2; o Epi-ready; Whether all the above items specified have been quoted in the PRICE BID.
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